Magnetic Tunnel Junction Having All-Around Structure

ABSTRACT

A magnetic tunnel junction (MTJ) device includes a cylindrically-shaped pillar structure and a first ferromagnetic layer disposed on at least a portion of the pillar structure. The first ferromagnetic layer exhibits a magnetization that is changeable in the presence of at least one of an applied bias and heat. The MTJ device further includes a dielectric barrier disposed on at least a portion of the first ferromagnetic layer and a second ferromagnetic layer disposed on at least a portion of the dielectric barrier. The second ferromagnetic layer exhibits a magnetization that is fixed. The MTJ device is configured such that the first and second ferromagnetic layers and the dielectric barrier concentrically surround the pillar structure.

BACKGROUND

The present invention relates generally to the electrical, electronicand computer arts, and, more particularly, to magnetic tunnel junctionstructures.

Magnetic tunnel junctions or MTJs are nanostructured devices within thefield of magnetoelectronics or spin electronics, hereafter calledspintronics. In this area, the experimental observation of sizable andtunable magnetoresistance (change of materials resistance due toexternal magnetic fields) is intimately related to the exploitation ofnot only charge of the electron but also its spin.

A magnetic tunnel junction (MTJ) device, which is a primary storageelement in a magnetic random access memory (MRAM), is a magnetic storageand switching device in which two ferromagnetic layers are separated bya thin insulating barrier (e.g., aluminum oxide) to form a stackedstructure. One of the ferromagnetic layers has a magnetization that isfixed, and is therefore referred to as a fixed or pinned layer, whilethe other ferromagnetic layer has a magnetization that can change, andis therefore referred to as a free layer. When a bias is applied to theMTJ device, electrons that are spin polarized by the ferromagneticlayers traverse the insulating barrier through a process known astunneling to generate an electric current whose magnitude depends on anorientation of magnetization of the ferromagnetic layers. The MTJ devicewill exhibit a low resistance when a magnetic moment of the free layeris parallel to the fixed layer magnetic moment, and will exhibit a highresistance when the magnetic moment of the free layer is orientedanti-parallel to the fixed layer magnetic moment.

The materials and geometry used to build the stack of different layersforming the MTJ device are among the most important parameters fordefining the characteristics of the device in terms of speed (i.e.,switching time) and power consumption (e.g., voltage and/or currentrequired to switch the device from one state to another). The typicalstructure of an MTJ is a pillar (i.e., stack of materials) having acylindrical shape, where current flows from a top layer to a bottomlayer, or vice versa, in order to switch the magnetization of oneferromagnetic layer; this is referred to as a spin transfer torque (STT)device. Another form of an MTJ is referred to as a spin orbit torque(SOT) device. In the SOT device, the pillar is still cylindricallyshaped but is deposited on top of a heavy metal conductor. Current flowshorizontally in this conductor and switches the magnetization of theferromagnetic layer at the interface.

In both the STT and the SOT MTJ devices, which have cylindrically shapedstacks, the surface area of the interface is equal to the area of acircle (A=πr², where A is the area of the interface and r is the radiusof the cylinder stack). In the current state of the art, the requiredenergy (power×time) to switch the state of the MTJ device is stillrelatively high, which is undesirable.

SUMMARY

The present invention, as manifested in one or more embodiments,beneficially provides a magnetic tunnel junction (MTJ) structure, andmethods for fabricating an MTJ structure, having an all-aroundconfiguration such that the ferromagnetic layers and barrier layersurround each other, rather than being in a stacked arrangement. Thisstructure, which may be formed in a manner consistent with a nanowire,beneficially increases the interface area between the free layer andspin orbit torque (SOT) metal, thereby providing enhanced switchingefficiency.

In accordance with an embodiment of the invention, an MTJ device havingan all-around structure includes a cylindrically-shaped pillar structureand a first ferromagnetic layer disposed on at least a portion of thepillar structure. The first ferromagnetic layer exhibits a magnetizationthat is changeable in the presence of at least one of an applied biasand heat. The MTJ device further includes a dielectric barrier disposedon at least a portion of the first ferromagnetic layer and a secondferromagnetic layer disposed on at least a portion of the dielectricbarrier. The second ferromagnetic layer exhibits a magnetization that isfixed. The MTJ device is configured such that the first and secondferromagnetic layers and the dielectric barrier concentrically surroundthe pillar structure.

In accordance with an embodiment of the invention, a method of formingan MTJ device having an all-around structure includes: forming acylindrically-shaped pillar structure; forming a first ferromagneticlayer on at least a portion of the pillar structure, the firstferromagnetic layer having a magnetization that is changeable in thepresence of at least one of an applied bias and heat; forming adielectric barrier on at least a portion of the first ferromagneticlayer; forming a second ferromagnetic layer on at least a portion of thedielectric barrier, the second ferromagnetic layer having amagnetization that is fixed; wherein the first and second ferromagneticlayers and the dielectric barrier concentrically surround the pillarstructure.

Techniques of the present invention can provide substantial beneficialtechnical effects. By way of example only and without limitation, an MTJaccording to one or more embodiments of the invention may provide one ormore of the following advantages:

-   -   increased interface area between the free layer and SOT metal;    -   faster switching speed;    -   enhanced power efficiency; and    -   increased cell density, since the SOT metal is grown vertically.

These and other features and advantages of the present invention willbecome apparent from the following detailed description of illustrativeembodiments thereof, which is to be read in connection with theaccompanying drawings.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

The following drawings are presented by way of example only and withoutlimitation, wherein like reference numerals (when used) indicatecorresponding elements throughout the several views, and wherein:

FIG. 1A is a perspective view depicting at least a portion of a standardspin orbit torque (SOT) magnetic tunnel junction (MTJ) device;

FIG. 1B is a perspective view depicting at least a portion of a standardspin transfer torque (STT) MTJ device;

FIG. 2 is a perspective view depicting at least a portion of anexemplary SOT MTJ device having an all-around structure, according to anembodiment of the present invention;

FIGS. 3A and 3B are perspective and top plan views, respectively,depicting at least a portion of the exemplary SOT MTJ device shown inFIG. 2, conceptually illustrating an increased interface area, accordingto an embodiment of the present invention; and

FIGS. 4 through 19 are cross-sectional views depicting exemplaryprocessing steps/stages in the fabrication of an exemplary MTJ devicehaving an all-around structure, according to an embodiment of thepresent invention.

It is to be appreciated that elements in the figures are illustrated forsimplicity and clarity. Common but well-understood elements that may beuseful or necessary in a commercially feasible embodiment may not beshown in order to facilitate a less hindered view of the illustratedembodiments.

DETAILED DESCRIPTION

Principles of the present invention, as manifested in one or moreembodiments, will be described herein in the context of an illustrativemagnetic tunnel junction (MTJ) device, and methods for fabricating anMTJ device, having an all-around structure that beneficially increasesan interface area between layers, thereby providing enhanced switchingefficiency. It is to be appreciated, however, that the invention is notlimited to the specific device and/or methods illustratively shown anddescribed herein. Rather, it will become apparent to those skilled inthe art given the teachings herein that numerous modifications can bemade to the embodiments shown that are within the scope of the claimedinvention. That is, no limitations with respect to the embodiments shownand described herein are intended or should be inferred.

FIGS. 1A and 1B are perspective views depicting at least a portion of astandard spin orbit torque (SOT) magnetic tunnel junction (MTJ) device100 and spin transfer torque (STT) MTJ device 120, respectively. Withreference to FIG. 1A, the SOT MTJ device 100 is shown sandwiched betweena first conductor 102 and a second conductor 104. The MTJ device 100 isformed as a cylindrical pillar or stack structure including a firstferromagnetic material layer 106, which may be a free layer, inelectrical contact with the first conductor 102, a dielectric barrier108 formed on the first ferroelectric material layer, and a secondferroelectric material layer 110, which may be a fixed or pinned layer,formed on the dielectric barrier. As previously stated, the fixed layer110 has a magnetization that is fixed and the free layer 106 has amagnetization that can change in the presence of an applied bias and/orheat. Similarly, as shown in FIG. 1B, the STT MTJ device 120 is formedas a cylindrical pillar/stack structure including a first ferroelectricmaterial layer 126, a dielectric barrier 128 formed on the firstferroelectric material layer, and a second ferroelectric material layer130 formed on the dielectric barrier.

Depending on the materials used to form the different layers in the MTJdevice and the materials used for the conductors, the switching of thefree layer can be enabled by SOT or STT or both mechanisms. In eithercase, the switching mechanism is triggered at an interface between twomaterial layers in the stack. Since the stack forming the MTJ devices100, 120 is cylindrical in shape, the interface area between any twolayers will be πr², where r is a radius of the stack. The amount ofenergy required to switch the magnetization of the MTJ device isdirectly proportional to this interface area.

In order to increase the interface area, and thereby improve switchingefficiency in the MTJ device, aspects of the present invention, asmanifested in one or more embodiments thereof, beneficially provide anMTJ device having an all-around structure, such that the ferromagneticlayers and barrier layer concentrically surround each other rather thanbeing disposed in a stacked arrangement. FIG. 2 is a perspective viewdepicting at least a portion of an exemplary MTJ device 200 having anall-around structure, according to an embodiment of the invention. TheMTJ device 200 uses an SOT-based switching mechanism. While embodimentsof the invention are not limited to any specific number of materiallayers, the basic MTJ embodiment shown in FIG. 2 includes four principallayers for clarity of description, including a reference ferromagneticlayer 202 with unchanged magnetization (spins up or down), referred toherein as a fixed or pinned layer, a free ferromagnetic layer 204 withreconfigurable magnetization (e.g., spins can be flipped up or downusing an applied bias current and/or voltage), referred to herein as afree layer, a barrier 206 disposed between the fixed layer 202 and thefree layer 204, and a conductor 208 which is arranged through a centerof the MTJ device 200, such that the fixed and free layers and barrierconcentrically surround the conductor.

In one or more embodiments, the conductor 208 comprises an SOT metal,which is preferably a heavy metal such as, for example, tungsten (W),platinum (Pt), tantalum (Ta), etc. The conductor 208 may be formed as athin shell of SOT metal (e.g., about 2-20 nanometers (nm) thick)disposed on an insulator core 210. The insulator core 210, which may bea cylindrically-shaped central nanowire oriented along a major axis thatis substantially vertical (z-axis), preferably comprises a suitabledielectric material (e.g., silicon dioxide, silicon nitride (SiN),silicon oxynitrate (SiO_(x)N_(y)), etc.) about 20-100 nm in diameter andabout 50-200 nm in height, although embodiments of the invention are notlimited to any specific materials or dimensions of the insulator core.

In one or more embodiments, the free layer 204, which may comprise asuitable magnetic material such as, for example, cobalt, iron, boron, ora combination thereof, is disposed on a surface of at least a portion ofthe conductor 208 and surrounds the conductor like a toroid. The barrier206, which, in the case of an SOT MTJ device, may comprise an insulatingmaterial such as, for example, magnesium oxide (MgO), aluminium oxide(AlO_(x)), magnesium aluminate or magnesium aluminium oxide (MgAlO_(x)),or a combination thereof, is disposed on a surface of the free layer 204and surrounds the free layer like a toroid. The fixed layer 202, whichmay comprise a suitable magnetic material such as, for example, cobalt,iron, boron, platinum, nickel, tungsten, iridium, or a combinationthereof, is disposed on a surface of at least a portion of the barrier206 and surrounds the barrier like a toroid; the fixed layer 202 iselectrically isolated from the free layer 204 by the barrier 206.

The free layer 204 is the layer directly contacting and thus forming aninterface with the SOT conductor 208. By passing a current through theconductor 208 in one direction or another, a physical phenomenon willoccur at the interface with the free layer 204 which may switch anorientation (i.e., direction) of magnetization of the free layerdepending on the direction of the current. This change in magnetizationof the free layer 204 will cause the overall MTJ device 200 to exhibit achange in resistance.

By forming the MTJ device in accordance with embodiments of theinvention, wherein the various layers of the MTJ device are arrangedconcentrically around the central nanowire conductor 208 in anall-around configuration, the interface between adjacent layers will besubstantially increased compared to the circular area of a conventionalMTJ stack. More particularly, with reference to FIGS. 3A and 3B, sincethe interface between the free layer 204 and conductor 208 follows acircumference of the conductor, the area of the interface will be 2πr,where r is a radius of the conductor, multiplied by a height, h, of thefree layer (i.e., A=2πrh). Thus, the surface area of the interfacebetween the free layer 204 and the conductor 208, and hence a switchingefficiency of the MTJ device, can be controlled as a function of boththe radius of the conductor and the height of the free layer, whichrepresents a significantly greater area relative to a standard MTJ stackof comparable dimensions. In addition to providing a substantialincrease in the interface area between the free layer 204 and theconductor 208, the circumferential magnetization of the free layer inthe all-around structure of the MTJ device 200 advantageously achievesenhanced stability.

By way of example only and without limitation, FIGS. 4 through 19 arecross-sectional views depicting exemplary processing steps/stages in thefabrication of an exemplary MTJ device 400 having an all-aroundstructure, according to embodiments of the invention. Although theoverall fabrication method and the structures formed thereby areentirely novel, certain individual processing steps required toimplement the method may utilize conventional semiconductor fabricationtechniques and conventional semiconductor fabrication tooling. Thesetechniques and tooling will already be familiar to one having ordinaryskill in the relevant arts given the teachings herein. Moreover, many ofthe processing steps and tooling used to fabricate semiconductor devicesare also described in a number of readily available publications,including, for example: P. H. Holloway et al., Handbook of CompoundSemiconductors: Growth, Processing, Characterization, and Devices,Cambridge University Press, 2008; and R. K. Willardson et al.,Processing and Properties of Compound Semiconductors, Academic Press,2001, which are both hereby incorporated herein by reference in theirentireties for all purposes. It is emphasized that while some individualprocessing steps are set forth herein, those steps are merelyillustrative, and one skilled in the art may be familiar with severalequally suitable alternatives that would also fall within the scope ofthe invention.

It is to be appreciated that the various layers and/or regions shown inthe accompanying figures may not be drawn to scale. Furthermore, one ormore semiconductor layers of a type commonly used in such semiconductordevices may not be explicitly shown in a given figure to facilitate aclearer description. This does not imply that the semiconductor layer(s)not explicitly shown are omitted in the actual device.

With reference now to FIG. 4, processing of the illustrative all-aroundMTJ device 400 starts with a complementary metal-oxide semiconductor(CMOS) wafer with n^(th) level metallization, where n is an integerrepresenting a particular metallization level in the wafer. The n^(th)level metallization (Mn level) includes a dielectric material layer 402(e.g., silicon dioxide (SiO_(x)), ceramic precursor polyborosilazane(SiBCN), silicon nitride (SiN), or a combination thereof) and a Mn metalconnection 404 (e.g., tantalum nitride (TaN), titanium nitride (TiN),tungsten (W), copper (Cu), ruthenium (Ru), cobalt (Co), tantalum (Ta),titanium (Ti), or any combination thereof), which may be patterned usingstandard lithography and etching. The metal connection 404 may beformed, in one or more embodiments, by etching an opening through thedielectric material layer 402, depositing an optional liner 406 onsidewalls and a bottom of the opening, and filling the opening withmetal 406.

FIG. 5 shows the formation of a dummy core 500 on an upper surface ofthe metal connection 404. The dummy core 500, in one or moreembodiments, is formed by depositing a layer of dummy amorphous silicon502 following by deposition of a hard mask layer 504 on a portion of anupper surface of the amorphous silicon layer in a desired pattern. Thehard mask layer 504 preferably comprises a silicon oxide compound(SiO_(x)), although other materials may be similarly employed (e.g.,silicon nitride). The dummy core 500 is then patterned using lithographyand anisotropic reactive ion etching (RIE) to form a pillar that ispreferably substantially cylindrical in shape. In one or moreembodiments, the height of the pillar is about 50-200 nm and thediameter of the pillar is about 20-100 nm, although embodiments of theinvention are not limited to any specific dimensions.

In FIG. 6, principal layers of the MTJ device are deposited.Specifically, a thin layer of SOT metal 602 is deposited on at least aportion of an upper surface of the dielectric material layer 402 anddummy core 500, including sidewalls of the amorphous silicon 502 pillarand sidewalls and upper surface of the hard mask layer 504. Next, a freelayer 604 is deposited on at least a portion of an upper surface of theSOT metal layer 602, a tunnelling barrier 606 is deposited on at least aportion of an upper surface of the free layer 604, and a reference(i.e., fixed or pinned) layer 608 is deposited on at least a portion ofan upper surface of the tunnelling barrier 606. In one or moreembodiments, the SOT metal layer 602 comprises tungsten with a depositedthickness of about 2-20 nm, the free layer 604 comprises cobalt, iron,boron, or a combination thereof, having a deposited thickness of about2-10 nm, the tunnelling barrier 606 comprises magnesium oxide (MgO),aluminium oxide (AlO_(x)), magnesium aluminate (MgAlO_(x)), or acombination thereof, with a deposited thickness of about 0.4-2 nm, andthe reference layer 608 comprises cobalt, iron, boron, platinum, nickel,tungsten, iridium, or a combination thereof, with a deposited thicknessof about 5-50 nm. It is to be appreciated, however, that embodiments ofthe invention are not limited to the specific material types ordimensions of the various MTJ device layers.

Next, a metallic hard mask layer 610 is deposited on at least a portionof an upper surface of the reference layer 608. The metallic hard masklayer 610, in one or more embodiments, preferably comprises, forexample, titanium nitride (TiN), tantalum nitride (TaN), ruthenium, or acombination thereof, and has a deposited thickness of about 5-30 nm.Each of the MTJ device layers 604, 606, 608, SOT metal layer 602, andhard mask layer 610, may be formed using a known deposition technique,including, but not limited to, sputtering, atomic layer deposition(ALD), plasma ALD, or a combination thereof. The MTJ device layers 604,606, 608, SOT metal layer 602, and hard mask layer 610 surrounding theamorphous silicon pillar 502 result in the formation of an MTJ stack.

With reference now to FIG. 7, portions of the hard mask layer 610disposed on horizontal surfaces of the MTJ structure are removed using,for example, directional etching or chemical mechanical polishing orplanarization (CMP), leaving the hard mask layer 610 on verticalsidewalls of the MTJ stack. A dummy dielectric layer 702 is subsequentlyformed on horizontal surfaces of the MTJ structure, including at least aportion of the upper surface of the dielectric material layer 402 and anupper surface of the MTJ stack (i.e., capping the SOT metal layer 602,MTJ device layers 604, 606, 608, and hard mask layer 610). In one ormore embodiments, the dummy dielectric layer 702 is formed using, forexample, a directional deposition of dielectric material (e.g., siliconnitride) followed by an isotropic etch to remove any dielectric materialdeposited on the vertical surfaces (e.g., sidewalls) of the MTJ stack. Afinal thickness of the structure will be larger than a thickness of theMTJ stack (e.g., about 20-50 nm).

FIG. 8 illustrates the deposition of a conformal dielectric layer 802over an upper surface of the MTJ structure, including an upper surfaceof the dummy dielectric layer 702, formed on the upper surface of thedielectric material layer 402 and upper surface of the MTJ stack, andsidewalls 610 and of the MTJ stack. The conformal dielectric layer 802may comprise, for example, SiO_(x), SiBCN, etc., and primarily serves toprotect the metallic hard mask layer 610 in a subsequent processingstep. A thickness of the conformal dielectric layer 802 is preferablyabout 30-100 nm, although embodiments of the invention are not limitedto any particular dimensions of the conformal dielectric layer.

RIE is then performed to remove portions of the conformal dielectriclayer 802 on horizontal surfaces of the MTJ structure, including theconformal dielectric layer disposed on the upper surface of the MTJstack and at least a portion of the conformal dielectric layer formed onthe upper surface of the dummy dielectric layer 702, as shown in FIG. 9.The remaining portion of the conformal dielectric layer 802 disposed onthe sidewalls of the MTJ stack is recessed, for example using ananisotropic (i.e., directional) etch, thereby exposing a portion of thedummy dielectric layer 702 formed on the upper surface of the MTJ stackand a top portion of the hard mask layer 610 disposed on the sidewallsof the MTJ stack. This RIE of the conformal dielectric layer 802 may beperformed in a manner consistent with a CMOS spacer process. In one ormore embodiments, the conformal dielectric layer 802 is recessed toabout 30-100 nm, although embodiments of the invention are not limitedto any specific dimensions of the conformal dielectric layer.

In FIG. 10, a selective anisotropic RIE is performed to remove portionsof the dummy dielectric layer 702. Specifically, the dummy dielectriclayer 702 capping the upper surface of the MTJ stack and portions of thedummy dielectric layer formed on the dielectric material layer 402 notcovered by the conformal dielectric layer 802 are removed. Next, aselective isotropic RIE is performed to remove the remaining dummydielectric layer 702 disposed under the conformal dielectric layer 802,as shown in FIG. 11.

With reference to FIG. 12, an isotropic etch is performed to removeportions of the metallic hard mask layer 610 not protected by theconformal dielectric layer 802. In one or more embodiments, theisotropic etch may be accomplished using, for example, RIE or wetetching or a combination of RIE and wet etching.

As depicted in FIGS. 13A and 13B, an isotropic etch of the MTJ stackwith cyclic oxidation/removal is performed using, for example, RIE onlyand RIE and organic wet etching, to remove portions of MTJ device layers604, 606 and 608 not protected by the hard mask layer 610.Alternatively, a highly-angled ion beam etch can be used to remove theportions of the MTJ device layers, resulting in a slightly differentprofile (not explicitly shown). In one or more embodiments, the etchingprocess can be end-pointed using the SOT metal layer 602 as an etch stoplayer, as shown in FIG. 13A. In this embodiment, the SOT metal layer 602remains essentially intact. In an alternative embodiment, the SOT metallayer 602 can be etched along with the MTJ device layers 604, 606, 608,as shown in FIG. 13B, such that only the SOT metal layer protected bythe hard mask layer 610 remains. Subsequent processing steps will bedescribed with reference to the embodiment shown in FIG. 13B, althougheach of these subsequent processing steps apply similarly to theembodiment shown in FIG. 13A, as will become apparent to those skilledin the art.

In FIG. 14, an encapsulation dielectric layer 1402 is formed on at leasta portion of the dielectric material layer 402 and entirely surroundingthe MTJ device structure. The encapsulation dielectric layer 1402 maycomprise silicon nitride, although other dielectric materials may besimilarly employed. Optionally, one or more interlayer dielectric (ILD)structures 1404 may be formed in the encapsulation dielectric layer 1402to electrically isolate the MTJ device from adjacent conductivestructures and/or devices. The ILD structures 1404 are formed of adielectric material, such as, for example, SiO_(x), SiBCN, SiN, or acombination thereof, although embodiments of the invention are notlimited to any specific dielectric material. In one or more embodiments,CMP is then performed to planarize the upper surface of the MTJstructure. CMP may be performed until at least a portion of an uppersurface of the hard mask layer 504 is exposed.

Subsequently, as illustrated in FIG. 15, the dummy core (500 shown inFIG. 5), which includes the hard mask layer and dummy amorphous siliconpillar (504 and 502, respectively, in FIG. 5) is removed leaving anopening 1502 through which an upper surface of the underlying metalconnection 404, as well as vertical walls of the SOT metal 602, areexposed. In one or more embodiments, the dummy core may be removed tothereby form the opening 1502 using a known etching process, such as,but not limited to, RIE, wet etching, or a combination thereof, using,for example, tetramethylammonium hydroxide (TMAH), diluted hydrofluoricacid (DHF), or similar etchants, as will be known to those skilled inthe art.

With reference now to FIG. 16, a layer of SOT metal 1606 is deposited onsidewalls and a bottom of the opening 1502, thereby effectively liningthe inner surfaces of the opening. With the SOT metal 602 and metalconnection 404 exposed, the SOT metal layer 1602 will be electricallyconnected with the SOT metal 602 and metal connection 404 so as to forman SOT metal extension in the opening 1502. The SOT metal extension 1602essentially forms a via providing electrical contact with the underlyingmetal connection 404. In one or more embodiments, the SOT metalextension 1602 comprises tungsten having a thickness of about 2-5 nm,although embodiments of the invention are not limited to any specificmetal types or dimensions. Once the SOT metal extension 1602 is formed,the opening 1502 is filled with a core dielectric material 1604 and isplanarized using CMP or a similar planarization/polishing process sothat the SOT metal extension and core dielectric material aresubstantially even with the upper surface of the encapsulationdielectric layer 1402.

A photoresist layer 1702 is formed over the semiconductor wafer,including on at least a portion of the upper surfaces of theencapsulation dielectric layer 1402, ILD structures 1404, SOT metalextension 1602 and core dielectric material 1604. This photoresist layer1702 is then patterned, using standard lithography and etching, to format least one opening 1704 through the photoresist layer and at leastpartially through the encapsulation dielectric layer 1402. In theprocess of forming the opening 1704, which in one or more embodiments isaccomplished using ILD RIE and oxide RIE, or the like, the conformaldielectric layer 802 on at least one side of the MTJ device is removed,thereby exposing at least a portion of the adjacent metallic hard masklayer 610, on which the conformal dielectric layer is formed, through asidewall of the opening 1704. This opening 1704 will be subsequentlyused to form an MTJ device contact. It is to be appreciated thatalthough only one MTJ device contact is shown in this illustrativeembodiment, in one or more embodiments, multiple MTJ device contacts canbe formed. One advantage to forming multiple MTJ device contacts is thatit can be shared or isolated.

FIG. 18 depicts the fabrication of an MTJ device contact 1802, which ispreferably formed using a contact metallization process, in one or moreembodiments. During the metallization process, a metal layer 1802 isdeposited over at least a portion of the wafer, filling the opening1704. The metal layer 1802 may comprise, for example, Ta, Ti, TaN, TiN,W, Ru, Co, Cu, or a combination thereof, although embodiments of theinvention are not limited to any specific metal(s) forming the metallayer. The metal layer 1802 provides electrical contact with themetallic hard mask layer 610 and is thus referred to as an MTJ devicecontact.

CMP, or a similar planarization process, is then performed to remove anyportions of the metal layer 1802 extending on the upper surface of thewafer outside the opening (1704 in FIG. 17) and to remove thephotoresist layer (1702 in FIG. 17) from the upper surface of the wafer.As a result of CMP, the SOT metal extension 1602 and core dielectricmaterial 1604 are exposed through the upper surface of the structure.

As shown in FIG. 19, an ILD layer 1902 is formed over the upper surfaceof the wafer such as by using a standard deposition process. The ILDlayer 1902 may comprise the same dielectric material used to form theILD structures 1404 (e.g., SiO_(x), SiBCN, SiN, or a combinationthereof), although embodiments of the invention are not limited to anyspecific material and/or process for forming the ILD layer 1902.

With continued reference to FIG. 19, the ILD layer 1902 is patterned(e.g., using standard lithography and etching) to form openings throughthe ILD layer; a first opening exposing the SOT metal extension 1602 andcore dielectric material 1604, and a second opening exposing the MTJdevice contact 1802. A first metal liner 1906 is formed on sidewalls ofthe first opening and a second metal liner 1908 is formed on sidewallsof the second opening using, for example, a sidewall metallizationprocess. The first and second openings are then filled with metal, or analternative conductor, to form first and second contacts, 1910 and 1912,respectively. The first contact 1910 provides electrical connection withthe free layer 604 of the MTJ device, via the SOT metal extension 1602and SOT layer 602, and the second contact 1912 provides electricalconnection with the reference layer 608 of the MTJ device, via the MTJdevice contact 1802 and metallic hard mask 610. The first and secondcontacts 1910, 1912 and first and second metal liners 1906, 1908 may, inone or more embodiments, comprise Ta, Ti, TaN, TiN, W, Ru, Co, Cu, or acombination thereof, although embodiments of the invention are notlimited to any specific conductor material. Furthermore, the contactsand metal liners need not be formed of the same material.

As previously stated, the MTJ device formed in accordance with one ormore embodiments of the invention is arranged such that the variouslayers of the MTJ device are beneficially arranged concentrically aroundthe central core dielectric material 1604 (acting as a nanowireconductor) in an all-around configuration. In this manner, the interfacearea between adjacent layers (e.g., between the free layer 604 and theSOT metal extension 1602) will be substantially increased compared tothe circular area of a conventional MTJ stack. Furthermore, thecircumferential magnetization of the free layer 604 in the all-aroundstructure of the MTJ device achieves enhanced stability, which isadvantageous.

At least a portion of the techniques of the present invention may beimplemented in an integrated circuit. In forming integrated circuits,identical die are typically fabricated in a repeated pattern on asurface of a semiconductor wafer. Each die includes a device describedherein, and may include other structures and/or circuits. The individualdie are cut or diced from the wafer, then packaged as an integratedcircuit. One skilled in the art would know how to dice wafers andpackage die to produce integrated circuits. Any of the exemplarycircuits illustrated in the accompanying figures, or portions thereof,may be part of an integrated circuit. Integrated circuits somanufactured are considered part of this invention.

Those skilled in the art will appreciate that the exemplary structuresdiscussed above can be distributed in raw form (i.e., a single waferhaving multiple unpackaged chips), as bare dies, in packaged form, orincorporated as parts of intermediate products or end products thatbenefit from having MTJ devices therein formed in accordance with one ormore embodiments of the invention, such as, for example, magnetic randomaccess memory (MRAM).

An integrated circuit in accordance with aspects of the presentdisclosure can be employed in essentially any memory storage applicationand/or electronic system, such as, but not limited to, MRAM devices,etc. Suitable systems for implementing embodiments of the invention mayinclude, but are not limited to, data storage systems, etc. Systemsincorporating such integrated circuits are considered part of thisinvention. Given the teachings of the present disclosure providedherein, one of ordinary skill in the art will be able to contemplateother implementations and applications of embodiments of the invention.

The illustrations of embodiments of the invention described herein areintended to provide a general understanding of the various embodiments,and they are not intended to serve as a complete description of all theelements and features of apparatus and systems that might make use ofthe circuits and techniques described herein. Many other embodimentswill become apparent to those skilled in the art given the teachingsherein; other embodiments are utilized and derived therefrom, such thatstructural and logical substitutions and changes can be made withoutdeparting from the scope of this disclosure. The drawings are alsomerely representational and are not drawn to scale. Accordingly, thespecification and drawings are to be regarded in an illustrative ratherthan a restrictive sense.

Embodiments of the invention are referred to herein, individually and/orcollectively, by the term “embodiment” merely for convenience andwithout intending to limit the scope of this application to any singleembodiment or inventive concept if more than one is, in fact, shown.Thus, although specific embodiments have been illustrated and describedherein, it should be understood that an arrangement achieving the samepurpose can be substituted for the specific embodiment(s) shown; thatis, this disclosure is intended to cover any and all adaptations orvariations of various embodiments. Combinations of the aboveembodiments, and other embodiments not specifically described herein,will become apparent to those of skill in the art given the teachingsherein.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of the invention. Asused herein, the singular forms “a,” “an” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise. It will be further understood that the terms “comprises”and/or “comprising,” when used in this specification, specify thepresence of stated features, steps, operations, elements, and/orcomponents, but do not preclude the presence or addition of one or moreother features, steps, operations, elements, components, and/or groupsthereof. Terms such as “above,” “below,” “upper,” “lower,” “top” and“bottom” are used to indicate relative positioning of elements orstructures to each other as opposed to absolute positioning.

The corresponding structures, materials, acts, and equivalents of allmeans or step-plus-function elements in the claims below are intended toinclude any structure, material, or act for performing the function incombination with other claimed elements as specifically claimed. Thedescription of the various embodiments has been presented for purposesof illustration and description, but is not intended to be exhaustive orlimited to the forms disclosed. Many modifications and variations willbe apparent to those of ordinary skill in the art without departing fromthe scope and spirit of the invention. The embodiments were chosen anddescribed in order to best explain the principles of the invention andthe practical application, and to enable others of ordinary skill in theart to understand the various embodiments with various modifications asare suited to the particular use contemplated.

The abstract is provided to comply with 37 C.F.R. § 1.72(b), whichrequires an abstract that will allow the reader to quickly ascertain thenature of the technical disclosure. It is submitted with theunderstanding that it will not be used to interpret or limit the scopeor meaning of the claims. In addition, in the foregoing DetailedDescription, it can be seen that various features are grouped togetherin a single embodiment for the purpose of streamlining the disclosure.This method of disclosure is not to be interpreted as reflecting anintention that the claimed embodiments require more features than areexpressly recited in each claim. Rather, as the appended claims reflect,inventive subject matter lies in less than all features of a singleembodiment. Thus the following claims are hereby incorporated into theDetailed Description, with each claim standing on its own as separatelyclaimed subject matter.

Given the teachings of embodiments of the invention provided herein, oneof ordinary skill in the art will be able to contemplate otherimplementations and applications of the techniques of embodiments of theinvention. Although illustrative embodiments of the invention have beendescribed herein with reference to the accompanying drawings, it is tobe understood that embodiments of the invention are not limited to thoseprecise embodiments, and that various other changes and modificationsare made therein by one skilled in the art without departing from thescope of the appended claims.

What is claimed is:
 1. A magnetic tunnel junction device, comprising: acylindrically-shaped pillar structure; a first ferromagnetic layerdisposed on at least a portion of the pillar structure, the firstferromagnetic layer having a magnetization that is changeable in thepresence of at least one of an applied bias and heat; a dielectricbarrier disposed on at least a portion of the first ferromagnetic layer;and a second ferromagnetic layer disposed on at least a portion of thedielectric barrier, the second ferromagnetic layer having amagnetization that is fixed; wherein the first and second ferromagneticlayers and the dielectric barrier concentrically surround the pillarstructure.
 2. The magnetic tunnel junction device of claim 1, whereinthe pillar structure comprises: a central insulator core having a majoraxis that is substantially vertical; and a conductive shell disposedover at least a portion of the central insulator core along the majoraxis; wherein the first ferromagnetic layer is in electric contact withthe conductive shell, and wherein the first and second ferromagneticlayers and the dielectric barrier concentrically surround the conductiveshell in a direction that is perpendicular to the major axis.
 3. Themagnetic tunnel junction device of claim 2, wherein the conductive shellcomprises a spin orbit torque (SOT) metal.
 4. The magnetic tunneljunction device of claim 3, wherein the SOT metal comprises at least oneof tungsten, platinum and tantalum, and wherein a thickness of the SOTmetal is about 2-20 nanometers.
 5. The magnetic tunnel junction deviceof claim 2, wherein the central insulator core comprises at least one ofsilicon dioxide (SiO₂), silicon nitride (SiN) and silicon oxynitrate(SiO_(x)N_(y)).
 6. The magnetic tunnel junction device of claim 2,wherein the central insulator core is about 20-100 nanometers indiameter and about 50-200 nanometers in height.
 7. The magnetic tunneljunction device of claim 2, wherein the first ferromagnetic layer istoroidal in shape and comprises at least one of cobalt, iron and boron,the conductive shell passing through a center of the first ferromagneticlayer.
 8. The magnetic tunnel junction device of claim 1, wherein thedielectric barrier is toroidal in shape and comprises at least one ofmagnesium oxide (MgO), aluminum oxide (AlO_(x)), and magnesium aluminate(MgAlO_(x)).
 9. The magnetic tunnel junction device of claim 1, whereinthe device is configured such that the magnetization of the firstferromagnetic layer switches as a function of a bias current flowingthrough the pillar structure.
 10. The magnetic tunnel junction device ofclaim 1, wherein the pillar structure comprises a central nanowireinsulator surrounded by a conductive shell, the nanowire insulator beingoriented along a major axis of the pillar structure.
 11. The magnetictunnel junction device of claim 1, wherein an interface area of themagnetic tunnel junction device is determined as 2πrh, where r is aradius of the pillar structure and h is a height of the firstferromagnetic layer, a switching efficiency of the magnetic tunneljunction device being controlled as a function of the interface area.12. A method of forming a magnetic tunnel junction device having anall-around structure comprises: forming a cylindrically-shaped pillarstructure; forming a first ferromagnetic layer on at least a portion ofthe pillar structure, the first ferromagnetic layer having amagnetization that is changeable in the presence of at least one of anapplied bias and heat; forming a tunneling barrier on at least a portionof the first ferromagnetic layer; and forming a second ferromagneticlayer on at least a portion of the tunneling barrier, the secondferromagnetic layer having a magnetization that is fixed; wherein thefirst and second ferromagnetic layers and the tunneling barrierconcentrically surround the pillar structure.
 13. The method of claim12, wherein forming the pillar structure comprises: depositing anamorphous silicon layer on an upper surface of at least a portion ofmetal connection formed in a dielectric material layer; depositing ahard mask layer on a portion of an upper surface of the amorphoussilicon layer, the hard mask layer and the amorphous silicon layerforming a dummy core; etching the dummy core to form the pillarstructure which is cylindrical in shape; and depositing a layer of spinorbit torque (SOT) metal on at least a portion of an upper surface ofthe dielectric material layer and sidewalls and an upper surface of thedummy core.
 14. The method of claim 13, wherein forming the firstferromagnetic layer comprises depositing a layer of at least one ofcobalt, iron and boron on at least a portion of an upper surface of theSOT metal.
 15. The method of claim 14, wherein forming the tunnelingbarrier comprises depositing at least one of a layer of magnesium oxide(MgO), aluminum oxide (AlO_(x)), and magnesium aluminate (MgAlO_(x)) onat least a portion of an upper surface of the first ferromagnetic layer.16. The method of claim 15, wherein forming the second ferromagneticlayer comprises depositing at least one of a layer of cobalt, iron,boron, platinum, nickel, tungsten and iridium.
 17. The method of claim12, further comprising forming a metallic hard mask layer on at least aportion of an upper surface of the second ferromagnetic layer.
 18. Themethod of claim 17, further comprising: removing portions of themetallic hard mask layer formed on horizontal surfaces of the secondferromagnetic layer; forming a dummy dielectric layer on horizontalsurfaces of the magnetic tunnel junction device; and forming a confirmaldielectric layer over an upper surface of the magnetic tunnel junctiondevice.
 19. The method of claim 18, further comprising: performingreactive ion etching to remove portions of the conformal dielectriclayer formed on horizontal surfaces of the magnetic tunnel junctiondevice; recessing the conformal dielectric layer remaining on sidewallsof the pillar structure thereby exposing a portion of the dummydielectric layer formed on an upper surface of the pillar structure andexposing a top portion of the metallic hard mask layer disposed onsidewalls of the pillar structure; removing portions of the dummydielectric layer formed on the upper surface of the pillar structure andnot covered by the conformal dielectric layer; and performing selectiveetching to remove remaining portions of the dummy dielectric layerdisposed under the conformal dielectric layer.
 20. The method of claim19, further comprising: removing portions of the metallic hard masklayer not protected by the conformal dielectric layer; removing portionsof the first and second ferromagnetic layers and tunneling barrier notprotected by remaining portions of the metallic hard mask layer; formingan encapsulation layer surrounding the magnetic tunnel junction device;and forming electrical contacts with the second ferromagnetic layer andthe pillar structure.